| Storage | |
| NAND Flash |
3D NAND
|
| Capacity |
512GB
|
| Internal or External |
Internal
|
| Sequential R/W |
Sequential Read (Max): Up to 2,400MB/s*
Sequential Write (Max): Up to 1,800MB/s* |
| Shock resistance |
1500G/0.5ms
|
| Ports | |
| Interface |
PCIe Gen3 x4
|
| Others | |
| Other Features |
Controller: RTS5766DL
Terabytes Written (TBW): 520TB Excellent read/write performance Heat sink keeps things 15% cooler Great upgrade option for creators High capacities Supports NVMe 1.4 LDPC & AES 256-bit encryption Supports Host Memory Buffer(HMB) |
| Physical Specification | |
| Form Factor |
M.2 2280
|
| Operating Temperature |
0°C – 70°C
|
| Dimension |
80 x 22 x 3.13mm / 3.15 x 0.87 x 0.13inch (with heat sink)
80 x 22 x 2.15mm / 3.15 x 0.87 x 0.09inch (without heat sink) |
| Storage Temperature |
-40°C – 85°C
|
| Weight |
9g / 0.32oz (with heat sink)
6.2g / 0.22oz (without heat sink) |
| Technical Info | |
| MTBF |
1,500,000 hours
|
| IOPs (4K Random Read/Write) |
4KB Random Read IOPS(Max): Up to 200K*
4KB Random Write IOPS(Max): Up to 150K* |
| Warranty Information | |
| Warranty |
3 Year Warranty
|




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